Bookcover of Ohmic Contact on Ternary ZnSxSe1-x Epilayers
Booktitle:

Ohmic Contact on Ternary ZnSxSe1-x Epilayers

ITO Ohmic Contact on Ternary ZnSxSe1-x Epilayers Prepared by LP-OMVPE

VDM Verlag Dr. Müller (2009-09-20 )

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ISBN-13:

978-3-639-20132-1

ISBN-10:
3639201329
EAN:
9783639201321
Book language:
English
Blurb/Shorttext:
High quality ZnS0.06Se0.94 epilayer which was lattice-matched to GaAs substrate has been prepared. The sulfur composition x was 0.06 has been determined by EPMA. The FWHM of X-ray diffraction was 187.2 arcsec. ITO film formed by thermal evaporated In-Sn alloy first, then annealing in O2 atmosphere. The conductivity and transparency of ITO have been trade-off at acceptable parameter. Because of the highest current in I-V characteristic in the structure of ITO/ZnS0.06Se0.94:N, we optimized the annealing temperature and time at 450C for 60min in O2 atmosphere. Because of the excellent transparency and conductivity in the structure of ITO/Glass, we optimized the annealing temperature and time at 650C for 60min in O2 atmosphere. In this study, ITO/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au- Zn double heterojunction (DH) structure has been prepared after annealing In- Sn/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au- Zn in O2 atmosphere. I-V characteristic of DH junction structure shows a diode electric property.
Publishing house:
VDM Verlag Dr. Müller
Website:
http://www.vdm-verlag.de
By (author) :
Tsung-Hsiang Shih
Number of pages:
140
Published at:
2009-09-20
Stock:
Available
Category:
Electronics, electro-technology, communications technology
Price:
59.00 €
Keywords:
ZnSSe, LP-OMVPE, ITO

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