Bookcover of Diffusion and clustering of B in Si
Booktitle:

Diffusion and clustering of B in Si

basics and defect engineering

LAP LAMBERT Academic Publishing (2010-08-04 )

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ISBN-13:

978-3-8383-8836-6

ISBN-10:
3838388364
EAN:
9783838388366
Book language:
English
Blurb/Shorttext:
Since the invention of the transistor at Bell Laboratories in the United States in 1947, almost all areas of our life have been touched by microelectronics, where silicon plays a dominant role as a basic material. Indeed, a continuous trend towards smaller but more powerful devices has been evidenced. Nonetheless, this miniaturization has been limited by difficulties in semiconductor device fabrication, further hampered by physical limits. Among dopants, B is absolutely the most used impurity to create p-type doped regions in silicon. Unfortunately the interaction with defects generated during the common industrial steps for devices production makes B to strongly diffuse and precipitate, hindering its use for ultra-shallow junction creation. Hence, new studies are required to face the problem. We deeply investigated the interaction of high B doped regions with the excess of defects generated by ion implantation and thermal annealing, as far as B precipitation, i.e. electical deactivation, and diffusion are concerned. The found results are hence used to develop new methodologies in order to control these two phenomena, by appropriate defect engineering.
Publishing house:
LAP LAMBERT Academic Publishing
Website:
https://www.lap-publishing.com/
By (author) :
Elena Bruno
Number of pages:
168
Published on:
2010-08-04
Stock:
Available
Category:
Physics, astronomy
Price:
68.00 €
Keywords:
Microelectronics, silicon, Doping, Boron, defects, diffusion, Precipitation, ultra-shallow-junctions, Implantation, helium

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