Bookcover of An SOI LDMOS For Better Switch Application
Booktitle:

An SOI LDMOS For Better Switch Application

Electron Devices

LAP LAMBERT Academic Publishing (2013-06-01 )

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ISBN-13:

978-3-659-40675-1

ISBN-10:
3659406759
EAN:
9783659406751
Book language:
English
Blurb/Shorttext:
This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1-m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1-m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET.
Publishing house:
LAP LAMBERT Academic Publishing
Website:
https://www.lap-publishing.com/
By (author) :
Arindam Biswas, Arzoo Rafique, Anup Kumar Bhattacharjee
Number of pages:
84
Published on:
2013-06-01
Stock:
Available
Category:
Electronics, electro-technology, communications technology
Price:
39.90 €
Keywords:
Electronic devices

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