Buchcover von Stress and Microstructural Evolution in Metal Oxide Thin Films
Buchtitel:

Stress and Microstructural Evolution in Metal Oxide Thin Films

Stress and functionality

LAP LAMBERT Academic Publishing (01.07.2016 )

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ISBN-13:

978-3-659-90516-2

ISBN-10:
365990516X
EAN:
9783659905162
Buchsprache:
Englisch
Klappentext:
System on Chip (SoC) and System in Package (SiP) are two electronic technologies that involve integrating multiple functionalities onto a single platform. When the platform is a single wafer, as in SOC, it requires the ability to deposit various materials that enable the different functions on to an underlying substrate that can host the electronic circuitry. Transition metal oxides which have a wide range of properties are ideal candidates for the functional material. These oxides need to be deposited on Si in certain crystallographic orientations. Thus, during growth of the functional oxide, an ambience in which the Si itself will not oxidize needs to be provided. In addition, during thin film growth on either Si or SiOx surface stresses are generated from various sources. Stress and its relaxation are also associated with the formation and evolution of defects. Both, stress and defects need to be managed in order to harness their beneficial effects and prevent detrimental ones.
Verlag:
LAP LAMBERT Academic Publishing
Webseite:
https://www.lap-publishing.com/
von (Autor):
K. V. L. V. Narayanachari
Seitenanzahl:
164
Veröffentlicht am:
01.07.2016
Lagerbestand:
Lieferbar
Kategorie:
Physik, Astronomie
Preis:
64,90 €
Stichworte:
Stress in thin films, functional oxides, in-situ stress, oxides on silicon

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