Resistive Random Access Memory的封面
书籍主题:

Resistive Random Access Memory

The New Generation High Speed Switching Non-Volatile Memory Device

LAP LAMBERT Academic Publishing (2012-04-24 )

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ISBN-13:

978-3-8484-8832-2

ISBN-10:
3848488329
EAN:
9783848488322
书籍语言:
英文
作品简介:
Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book.
出版社 :
LAP LAMBERT Academic Publishing
网址:
https://www.lap-publishing.com/
由(作者):
Arnab Hazra
页码 :
96
发表日期:
2012-04-24
现货:
备有现货
类别:
电子学,电子-技术,通信技术
价格:
49.00 €
关键词:
Device fabrication, Dynamic Memory, RAM cell, Resistive Switching, Trasition Metal Oxides, Metal-Insulator-Metal structure.

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